| PART |
Description |
Maker |
| SPW11N80C3 SPW11N80C3-11 |
New revolutionary high voltage technology
|
Infineon Technologies A...
|
| SPP06N60C3 SPP06N60C307 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP24N60C3 SPP24N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPN03N60S5 SPN03N60S505 |
New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated
|
Infineon Technologies AG
|
| SPI11N60S5 SPP11N60S5 SPP11N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP04N60S5 SPP04N60S507 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP04N60C3 SPA04N60C3 SPP04N60C309 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPA20N60CFD09 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP08N80C308 SPP08N80C3-08 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG Infineon Technologies A...
|
| IPB60R060C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|