| PART |
Description |
Maker |
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| CY7C1529AV18-200BZXI CY7C1529AV18-250BZXI |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1427AV18-250BZI |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1992BV18-167BZXC CY7C1992BV18-300BZC CY7C1992B |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 9 DDR SRAM, 0.5 ns, PBGA165
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1523AV18-200BZI CY7C1523AV18-300BZI CY7C1524AV |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 18 DDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AEB18204BP-30 |
36 MBit DDR II SRAM 4 Word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1319KV18-250BZC CY7C1319KV18-12 |
18-Mbit DDR II SRAM Four-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1319CV18-167BZC CY7C1319CV18-167BZI CY7C1319CV |
18-Mbit DDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
