| PART |
Description |
Maker |
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| LB421-14 |
RF POWER LDMOS TRANSISTOR
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| BLF6G10LS-200 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G15LS-300P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| LK702-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF6G22LS-75 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF6G10L-40BRN |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MRFX1K80H |
RF Power LDMOS Transistor
|
NXP Semiconductors
|
| BLF8G27LS-140 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLC8G27LS-160AV |
Power LDMOS transistor
|
NXP Semiconductors
|
