| PART |
Description |
Maker |
| 2SK30ATM |
Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
Toshiba Semiconductor
|
| BA3518F-T1 BA3528FP-T1 BA3506AFT1 BA3506AFE1 BA350 |
0.031 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO16 SOP-16
0.034 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO28 HSOP-28
0.069 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18
0.04 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18
5.4 W, 2 CHANNEL, AUDIO AMPLIFIER, PSFM12
5.2 W, 2 CHANNEL, AUDIO AMPLIFIER, PSFM10
|
Intel, Corp.
|
| 2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| BA3306 A5800528 |
Audio LSIs > Pre amplifier/Line amplifier > Pre amplifier
Dual preamplifier with ALC
From old datasheet system
|
ROHM[Rohm]
|
| ATA01502 ARA2008 ATA01502D1C |
The ATA01502D1C is an AGC Transimpedence Amplifier to be used in the following applications: SONET OC-3/SDH STM-1 Receiver, FDDI ...
Transimpedance Amplifiers (TIAs)
From old datasheet system
Reverse Amplifier with Step Attenuator
AGC Transimpedance Amplifier
|
Anadigics Inc
ATA01501
ANADIGICS[ANADIGICS, Inc]
|
| BA3513 BA3513AFS A5800811 |
From old datasheet system
3V dual pre / power amplifier
Audio LSIs > Headphone stereo amplifier > Prepower amplifier for headphone stereo
|
Rohm CO.,LTD.
|
| S1724BBBA S1724BDBA S1724CBBA S1724CDBA S1724DDBA |
Optical amplifier platform, erbium-doped fiber amplifier. P0=16.0 dBm. Connector FC/PC. Without heat sink.
Optical Amplifier Platform1724-Type Eribium-Doped Fiber Amplifier(S and V Series)
Optical Amplifier Platform/1724-Type Eribium-Doped Fiber Amplifier(S and V Series)
Optical Amplifier Platform,1724-Type Eribium-Doped Fiber Amplifier(S and V Series) 光放大器平台,1724 -型Eribium铒光纤放大器（S和V系列
BOARD INTERFACE KGZ/GMS 0-25%
Optical amplifier platform, erbium-doped fiber amplifier. P0=13.0 dBm. Connector FC/PC. Without heat sink.
|
AGERE[Agere Systems]
ERICSSON
Austin Semiconductor, Inc
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| FH103 1283 |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| SE1020W SE1020 |
1.25 Gb/s Transimpedance Amplifier Product Preview
Amplifier, 1.25Gb/s Transimpedance Amplifier
|
SiGe Semiconductor, Inc...
SiGe Semiconductor Inc.
SIGE[SiGe Semiconductor, Inc.]
|
| CPH5901 |
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
|
Sanyo Semicon Device
|
| CPH5905 |
High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications
|
Sanyo Semicon Device
|
