| PART |
Description |
Maker |
| RJP60V0DPM-80T2 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJP60V0DPM |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60D1DPE-15 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60M3DPQ-E0 |
600V - 17A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| 1N4508A |
Diode Switching 600V 22A 2-Pin DO-4
|
New Jersey Semiconductors
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
