| PART |
Description |
Maker |
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| IXGH60N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBTs 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| RJH6086BDPK RJH6086BDPK-15 |
600 V - 45 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| STGW20V60DF STGWT20V60DF STGB20V60DF STGP20V60DF |
600 V, 20 A very high speed trench gate field-stop IGBT
Low thermal resistance
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
STMicroelectronics
|
| STGW20H60DF STGWT20H60DF |
Low thermal resistance
600 V, 20 A high speed trench gate field-stop IGBT
|
STMicroelectronics
ST Microelectronics
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
