| PART |
Description |
Maker |
| CY14B101L CY14B101L-SP25XCT CY14B101L-SP35XCT CY14 |
1-Mbit (128K x 8) nvSRAM
|
Cypress Semiconductor
|
| CY14E102L-BA45XCT CY14E102N-BA45XCT CY14E102L-ZS25 |
2-Mbit (256K x 8/128K x 16) nvSRAM
|
Cypress Semiconductor
|
| CY14B101Q110 CY14B101Q2-LHXIT |
1 Mbit (128K x 8) Serial SPI nvSRAM
|
http://
Cypress Semiconductor
|
| CY14B101K-SP35XC CY14B101K-SP35XI CY14B101K-SP35XI |
1 Mbit (128K x 8) nvSRAM With Real Time Clock
|
Cypress Semiconductor
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| SST29VE010-200-4I-EHE SST29VE010-200-4I-WHE SST29V |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
|
| STK14CA808 STK14CA8-RF25ITR STK14CA8-NF35ITR STK14 |
128K X 8 NON-VOLATILE SRAM, 25 ns, PDSO48
128Kx8 Autostore nvSRAM
128K X 8 NON-VOLATILE SRAM, 25 ns, PDSO32
128Kx8 Autostore nvSRAM
|
Simtek Corporation
|
| CY7C109D-10VXI |
1-Mbit (128K x 8) Static RAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
| STK17TA8-RF25 STK17TA8-RF25I STK17TA8-RF25ITR STK1 |
128k X 8 AutoStore nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
