| PART |
Description |
Maker |
| PHP191NQ06LT PHB191NQ06LT |
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
PHP/PHB191NQ06LT; N-channel Trenchmos (tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUK9618-55 BUK9618-56 BUK9618-55118 |
TrenchMOS transistor Logic level FET
TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET)
57 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP SEMICONDUCTORS
|
| BUK9614-55A BUK9514-55A |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 35x25 mm; Packaging: Bulk
TrenchMOS logic level FET
TrenchMOS TM logic level FET
TrenchMOS(tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PSMN005-55B PSMN005-55P |
N-channel logic level TrenchMOS(TM) transistor
N-channel logic level TrenchMOS transistor(N沟道逻辑电平 TrenchMOS晶体
|
Philips
NXP SEMICONDUCTORS
|
| PHB55N03LT PHD55N03LT PHP55N03LT PHB55N03 |
N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) 55 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK962R8-30B |
N-channel TrenchMOS logic level FET 75 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| PHD71NQ03LT |
N-channel TrenchMOS logic level FET 75 A, 30 V, 0.0152 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
NXP Semiconductors N.V.
|
| PHK31NQ03LT |
N-channel TrenchMOS logic level FET
|
NXP Semiconductors
|
| PH955L |
N-channel TrenchMOS logic level FET
|
NXP Semiconductors
|
| PSMN3R0-30YL09 |
N-channel TrenchMOS logic level FET
|
NXP Semiconductors
|
