| PART |
Description |
Maker |
| BSS123 BSS123-T |
150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-channel TrenchMOS(TM) transistor Logic Level FET
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor
|
Philips
NXP Semiconductors
|
| PHB101NQ04T PHP101NQ04T |
N-channel Trenchmos (tm) standard level FET
N-channel TrenchMOS standard level FET 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS standard level FET
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHP160NQ08T PHB160NQ08T |
CAP 0.1UF 100V 10% X7R AXIAL TR-14 75 A, 75 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS standard level FET
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHP18NQ20T PHB18NQ20T PHB_PHP18NQ20T_1 |
N-channel TrenchMOS transistor(N沟道TrenchMOS 晶体管逻辑电平场效应管)
From old datasheet system
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRF530N |
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PSMN030-150B PSMN030-150B_1 |
From old datasheet system
N-channel TrenchMOS transistor
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHW80NQ10T PHW80NQ10T_1 |
N-channel TrenchMOS(tm) transistor
From old datasheet system
N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PSMN030-150P PSMN030-150P_1 |
From old datasheet system
N-channel TrenchMOS transistor
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUK7524-55A BUK7624-55A BUK7624-55A118 |
TrenchMOS(tm) standard level FET
TrenchMOS TM standard level FET
TrenchMOS standard level FET 47 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
