| PART |
Description |
Maker |
| 2N7002ZTL-AN3-R 2N7002ZTG-AN3-R |
300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
Unisonic Technologies
|
| MSN0650Z MSN0650Z-TO251 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| MSN06B2K MSN06B2K-TO220 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| MSN06B0F |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| RJK0653DPB RJK0653DPB-00-J5 RJK0653DPB-13 |
60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| CMPDM7002AE |
60V, 300mA N-Channel MOSFET in SOT-23 package
|
Central Semiconductor Corp
|
| RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0654DPB-00-J5 RJK0654DPB-15 |
60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching
60V, 30A, 8.3m?nax. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| MSC0605W |
60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
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|
| FDMS5352 |
60V N-Channel Power Trench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel
60V N-Channel Power TrenchMOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| STD12NE06L STD12NE06L-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 12A条（丁）|51AA
N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET
N-CHANNEL POWER MOSFET
|
California Eastern Laboratories, Inc.
STMicroelectronics
ST Microelectronics
|
