| PART |
Description |
Maker |
| 12N60G-T2Q-T 12N60L-T2Q-T 12N60G-TA3-T 12N60G-TF1- |
12A, 600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MTN2N70I3 |
N-Channel Enhancement Mode Power MOSF
|
Cystech Electonics Corp.
|
| AOW12N60 AOWF12N60 |
600V,12A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| AOT12N60 |
600V,12A N-Channel MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| STW12NC60 |
N-CHANNEL 600V - 0.48ohm - 12A TO-247 PowerMeshII MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RJK60S3DPP-E0 RJK60S3DPP-E0-T2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S3DPD-00J2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRG4BC30UD IRG4BC30UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
