| PART |
Description |
Maker |
| MX29LV040QI-70 MX29LV040TI-70 MX29LV040QC-70 |
0.5A 40V Schottky Rectifier; Package: SOD-123 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
0.5A 30V Schottky Rectifier; Package: SOD-123 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PQCC32
|
Macronix International Co., Ltd.
|
| M100FG |
10000 V rectifier 10-100 mA forward current,200 ns recovery time
|
Voltage Multipliers, Inc.
|
| AP038R5-00 |
32000 MHz - 45000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.2 dB INSERTION LOSS
|
SKYWORKS SOLUTIONS INC
|
| NE529F NE529H |
COMPARATOR, 10000 uV OFFSET-MAX, CDIP14
COMPARATOR, 10000 uV OFFSET-MAX, MBCY10
|
NXP SEMICONDUCTORS
|
| 0070.5021.B1 0070.9521.B1 0070.1181.B1 0070.1111.A |
11 - 95 VAC ・ 250 - 10000 A ・ 5 - 20 mm
|
Schurter Inc.
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| SFT1305 |
10000 mA, 45 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
SANYO SEMICONDUCTOR CO LTD
|
| KED103CY |
(KEDxxxx) NTC WIDERSTAND 10000 OHM
|
BTH
|
| HMC611LP4E HMC611LP409 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
http://
Hittite Microwave Corporation
|
| SDS0402BL-103M-S |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, SMD
|
YAGEO CORP
|
| CTLQ2220CF-103M CENTRALTECHNOLOGIES-CTLQ2220CF-6R8 |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, SMD
|
CENTRAL TECHNOLOGIES
|
|
