| PART |
Description |
Maker |
| RJK6002DJE-00Z0 RJK6002DJE-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6025DPD |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6032DPD-00J2 RJK6032DPD-15 |
600V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S5DPP-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6013DPP-E0 RJK6013DPP-E0-15 |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S8DPK-M0 RJK60S8DPK-M0-T0 |
600V - 110A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03M5DPA-00-J5A |
30V, 30A, 6.5mmax.N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| H30D60 H30D30 H30D40 H30D50 |
HIGH EFFICIENCY RECTIFIERS(30A/300-600V)
HIGH EFFICIENCY RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| 30ETH06 30ETH06-1 30ETH06S |
Hyperfast Rectifier
600V 30A HyperFast Discrete Diode in a TO-220AC package
600V 30A HyperFast Discrete Diode in a TO-262 package
600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
|
IRF[International Rectifier]
|
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
