| PART |
Description |
Maker |
| MH32S72QJA-8 MH32S72QJA-7 |
2415919104-BIT ( 33554432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32V725BST-6 MH32V725BST-5 |
HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S64PFJ-7L MH32S64PFJ-6L |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM
|
Mitsubishi Electric Corporation
|
| AM41DL32X4GB70IS AM41DL32X4GB70IT AM41DL32X4GB85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
SPANSION
|
| AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| W25X20AVDAIZ W25X40AVDAIZ W25X80AVDAIZ W25X40AVSNI |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| W25X10AL W25X10ALDAIG W25X10ALDAIZ W25X10ALSNIG W2 |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| W25X10L W25X20L W25X10LSNEG W25X80L W25X80LZPEG W2 |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MR533252J |
2,097,152-Word X 16-Bit or 4,194,304-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM
From old datasheet system
|
OKI
|
| MR53V8052J |
524,288-Word X 16-Bit or 1,048,576-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM
From old datasheet system
|
OKI
|
