PART |
Description |
Maker |
SSM6E03TU |
Multi-chip discrete device (P-ch N-ch)
|
TOSHIBA
|
HN7G02FU |
TOSHIBA Multi Chip Discrete Device
|
TOSHIBA[Toshiba Semiconductor]
|
HN2E01F07 HN2E01F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation Toshiba Semiconductor
|
SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
CTLM1074-M832D |
MULTI DISCRETE MODULE 垄芒 SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER MULTI DISCRETE MODULE ?SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|
10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 1000V 1A Ultra-Fast Discrete Diode in a SMB package 100V 1A Ultra-Fast Discrete Diode in a SMB package 200V 1A Ultra-Fast Discrete Diode in a SMB package 400V 1A Ultra-Fast Discrete Diode in a SMB package 600V 1A Ultra-Fast Discrete Diode in a SMB package 800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors International Rectifier, Corp. IRF[International Rectifier]
|
AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging 600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging 1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging 1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging 10-Bit D-Type Latch 600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器 8-Bit D-Type Latch 8位D型锁存器
|
Bourns, Inc.
|
OM5236ST OM5241ST OM5240ST OM5238ST OM5237ST OM523 |
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package 400V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package 150V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package 150V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package 100V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package SINGLE ISOLATED RECTIFIER IN HERMETIC 200V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
International Rectifier List of Unclassifed Manufacturers ETC[ETC]
|
2SJ221 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type Silicon P-Channel MOS FET
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
20TQ040S 20TQ035S 20TQ045S 20TQ040 20TQ035STRR 20T |
40V 20A Schottky Discrete Diode in a TO-220AC package 45V 20A Schottky Discrete Diode in a D2-Pak package 35V 20A Schottky Discrete Diode in a D2-Pak package COG Technology, 128 x 64 pixel format SCHOTTKY RECTIFIER 40V 20A Schottky Discrete Diode in a D2-Pak package 45V 20A Schottky Discrete Diode in a TO-220AC package
|
IRF[International Rectifier]
|
2SJ208 2SJ208-T2 2SJ208-T1 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0502-8 00; No. of Positions: 6; Connector Type: Wire P-CHANNEL MOS FET FOR SWITCHING
|
NEC Corp. NEC[NEC]
|
2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE P-channel enhancement type
|
NEC Corp. NEC[NEC]
|