| PART |
Description |
Maker |
| TGF4260-EPU |
9.6mm Discrete HFET C BAND, Si, RF SMALL SIGNAL, HFET
|
TriQuint Semiconductor, Inc.
|
| TGF4260-SCC |
9.6 mm Discrete HFET
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF4112-EPU TGF4112 |
12 mm Discrete HFET
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| TGF4260 TGF4260-EPU |
9.6mm Discrete HFET
|
TRIQUINT[TriQuint Semiconductor]
|
| SHF-0198 |
DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET
|
STANFORD[Stanford Microdevices]
|
| TGF2021-04 |
DC - 12 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2021-08 TGF2021-08-15 |
DC - 12 GHz Discrete power pHEMT
|
TriQuint Semiconductor, Inc.
|
| TGF2022-60 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2021-08 |
DC - 12 GHz Discrete power pHEMT 直流- 12吉赫的分立功率pHEMT
|
Xiamen Hongfa Electroacoustic Co., Ltd.
|
| FP1189-PCB2140S |
1/2 - Watt HFET 1 / 2 -瓦特异质结场效应晶体
|
Central Semiconductor, Corp.
|
| FP1189 |
High Performance ?-Watt HFET(Heterostructure FET)
High Performance ?-Watt HFET(Heterostructure FET)
High Performance ??Watt HFET(Heterostructure FET)
|
List of Unclassifed Manufacturers
ETC
N.A.
|
| SHF-0189-TR1 |
S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
|
RF MICRO DEVICES INC
|
