| PART |
Description |
Maker |
| R95-510A-110 R95-510A-A30 |
Pulse Burst Radar Level Transmitter
|
Magnetrol International, Inc.
|
| PHI214-30EL PH1214-30EL |
Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2 - 1.4 GHz
High Speed Comparator; Package: PDIP; No of Pins: 16; Temperature Range: 0°C to 70°C
Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty . 1.2 - 1.4 GHz
Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
|
Tyco Electronics
|
| HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| PH3134-9L PTI3134-9L |
Radar Pulsed Power Transistor/ SW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.1A I(C)
Radar Pulsed Power Transistor, 9W, 300us Pulse, 10% Duty 3.1 - 3.4 GHz
|
Tyco Electronics
|
| PH3135-5M |
Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| PH3134-9L |
Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300μs Pulse, 10% Duty
Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| PHI214-25S |
Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 25W, lms Pulse, 10% Duty 1.2 - 1.4 GHz 雷达脉冲功率晶体管，25瓦中，LMS脉冲0％的责任12日至1月四号吉
|
Tyco Electronics
|
| PH1113-100 |
Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty
Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty 雷达脉冲功率晶体 100瓦，11日至1月三日千兆赫，为3ms脉冲0％的关税
|
MACOM[Tyco Electronics]
|
| PH3134-11S |
Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1μs Pulse, 10% Duty
Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| PH2729-110M |
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| HVV1214-025S |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
|
HVVi Semiconductors, Inc.
|
|
