| PART |
Description |
Maker |
| KS24C010 KS24C021 KS24C011 KS24C020 |
1.024 / 2.048-BIT SERIAL EEPROM
1,024/2,048-bit serial eeprom 1,024 / 2,048位串行EEPROM
(KS24C010 / KS24C011 / KS24C020 / KS24C021) 1024/2048-bit serial eeprom
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KS24C010 KS24C011 KS24C020 KS24C021 KS24C021CS KS2 |
From old datasheet system
SERIAL EEPROM,256X8,CMOS,DIP,8PIN,PLASTIC
SERIAL EEPROM,256X8,CMOS,SOP,8PIN,PLASTIC
1,024/2,048-bit serial eeprom
1.024 / 2.048-BIT SERIAL EEPROM
|
Samsung Electronics Inc
Samsung semiconductor
|
| IS93C46A IS93C46A-3GI IS93C46A-3GL IS93C46A-3GLI I |
64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
|
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solution, Inc
|
| IDT72805LB10BGI IDT72845LB20PFI IDT72835LB20PFI ID |
4K x 18 DualSync FIFO, 5.0V
2K x 18 DualSync FIFO, 5.0V
1K x 18 DualSync FIFO, 5.0V
256 x 18 DualSync FIFO, 5.0V
512 x 18 DualSync FIFO, 5.0V
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 512 X 18 BI-DIRECTIONAL FIFO, 6.5 ns, PQFP128
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 2K X 18 BI-DIRECTIONAL FIFO, PBGA121
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 1K X 18 BI-DIRECTIONAL FIFO, PBGA121
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 512 X 18 BI-DIRECTIONAL FIFO, PBGA121
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 2K X 18 BI-DIRECTIONAL FIFO, 6.5 ns, PQFP128
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18 CMOS双SyncFIFO56 × 18，双512 × 18，双1,024 × 18，双2,048 × 18，双4,096 × 18
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18, and DUAL 4,096 x 18
|
Integrated Device Technolog...
IDT
Integrated Device Technology, Inc.
Integrated Device Techn...
|
| BR93LL46F BR93LL46FV |
1,024-Bit Serial Electrically Erasable PROM
|
ROHM[Rohm]
|
| IDT72V845L15PF IDT72V845L20PF IDT72V805L15PFI IDT7 |
15MBaud CMOS logic optocoupler. Dual channel SOIC-8; Package: SOIC-W; No of Pins: 8; Container: Box
15MBaud CMOS logic optocoupler. Dual channel SOIC-8; Package: SOIC-W; No of Pins: 8; Container: Tape & Reel
8 Input, 6 Output Video Switch Matrix with Output Drivers; Package: TSSOP; No of Pins: 24; Container: Rail
3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18 3.3伏CMOS双SyncFIFO56 × 18，双512 × 18，双1,024 × 18，双2,048 × 18
|
Integrated Device Technology, Inc.
|
| MSM531602E MSM531602E-XXGS-K MSM531602E-XXRS MSM53 |
1,048,576-Word X 16-Bit or 2,097,152-Word x 8-Bit MASKROM 1,048,576字16位或2097152字8MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CAT34WC02J-TE13 CAT34WC02PA-1.8TE13 CAT34WC02PA-TE |
13-Bit to 26-Bit Registered Buffer PC2700-/PC3200-Compliant
2K-Bit I2C Serial EEPROM, Serial Presence Detect
1-Mb (64K x 16) Static RAM
2K-Bit I2C Serial EEPROM/ Serial Presence Detect
1:4 Clock Fanout Buffer
5V, 3.3V, ISR™ High-Performance CPLDs
I2C Serial EEPROM I2C串行EEPROM
|
CATALYST[Catalyst Semiconductor]
|
| AM29F800T-70 AM29F800T-90 AM29F800T-150SEB AM29F80 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 8兆位,048,576 x 8-Bit/52488 x 16位）.0伏的CMOS只，扇区擦除闪存
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
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