| PART |
Description |
Maker |
| RJK03M4DPA-00-J5A RJK03M4DPA-15 |
30V, 35A, 4.6mΩmax.N Channel Power MOS FET
30V, 35A, 4.6mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FDMC4435BZ |
P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ
P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ
|
Fairchild Semiconductor
|
| FDMC8878 |
N-Channel Power Trench MOSFET 30V, 16.5A, 14mohm
|
Fairchild Semiconductor
|
| FDMS869007 FDMS8690 |
N-Channel Power Trench? MOSFET 30V, 27A, 9.0m
N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз
|
FAIRCHILD[Fairchild Semiconductor]
|
| UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
NEC[NEC]
|
| MSN3400L |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| RJK0305DPB-02-15 |
30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FDN537N |
30V Single N-Channel Power TrenchMOSFET
Single N-Channel Power Trench MOSFET
|
Fairchild Semiconductor
|
| MSC0311WE |
30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSC0305W MSC0305W-SOP8 |
-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
