| PART |
Description |
Maker |
| CJP06N60 |
Power filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJU05N25 |
MOSFET MOSFET
Power Filed Effect Transistor
|
Glenair, Inc.
JIANGSU[Jiangsu Changjiang Electronics]
|
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| MRF137 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
From old datasheet system
RF POWER FIELD-EFFECT TRANSISTOR
|
ADVANCED SEMICONDUCTOR INC
|
| MTW10N40E |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Motorola Mobility Holdings, Inc.
|
| CMT14N50GN220F CMT14N5009 |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
|
| MTV20N50E |
Power Field Effect Transistor
|
ON Semiconductor
|
| CMT14N50 CMT14N50N3P |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
|
| MTM25N10 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
|
| IRF830 |
Power Field Effect Transistor
|
ON Semiconductor
|
