| PART |
Description |
Maker |
| GS864032 GS864018 GS864036 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS8642Z18 GS8642Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS864272C-167V GS864272C-250IV GS864272C-200V GS86 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 8 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 7.5 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 8 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 6.5 ns, PBGA119
|
GSI Technology, Inc.
|
| K7I643684M-FI30 K7I641884M K7I641884M-CE25 K7I6418 |
72Mb DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| GS8662D08E-250 GS8662D08E-200 GS8662D08GE-167I GS8 |
72Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8662Q08E-167 GS8662Q08E-250 GS8662Q08E-300I GS86 |
72Mb SigmaQuad-II Burst of 2 SRAM
|
GSI[GSI Technology]
|
| GS864218B-167IV GS864218B-167V GS864218B-200IV GS8 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8662R08E-333 GS8662R08E-333I GS8662R08E-300 GS86 |
72Mb SigmaCIO DDR-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8640Z36T-200 GS8640Z36T-300I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
| GS8642ZV18B-300I GS8642ZV18B-167I GS8642ZV18GB-167 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8640ZV36T-300I GS8640ZV36T-200 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
