| PART |
Description |
Maker |
| CM1200HG-66H09 |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800E2Z-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800E2C-66H |
2nd-Version HVIGBT Modules
|
Mitsubishi Electric
|
| MDO500 MDO500-12N1 MDO500-14N1 MDO500-16N1 MDO500- |
High Power Diode Modules
High Power Diode Modules 560 A, 1400 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 大功率二极管模块
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| MDD250-16N1 MDD250 MDD250-08N1 MDD250-12N1 MDD250- |
High Power Diode Modules 290 A, 1200 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CM150E3U-24H |
IGBT Modules:1200V
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| TM90RZ-24 TM90RZ-2H TM90EZ-24 TM90EZ-2H |
THYRISTOR MODULES HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
