| PART |
Description |
Maker |
| ML792E32 |
(ML7xx32) 10Gbps InGaAsP DFB LASER DIODE
|
Mitsubishi Electric
|
| C-13-DFB10-TK-SLC2I-HT-01 C-13-DFB10-TK-SSC2I-HT-0 |
FIBER OPTIC DFB LASER MODULE EMITTER, 1295-1325nm, 10000Mbps, THROUGH HOLE MOUNT, TO-18, SC CONNECTOR
10Gbps 1310 nm 0 ~ 85篓卢C MQW-DFB Laser Diode Module-Differential TOSA
10Gbps 1310 nm 0 ~ 85oC MQW-DFB Laser Diode Module-Differential TOSA
|
Source Photonics, Inc.
|
| NX8303CG-CC NX8303BG-CC NX8303BG |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
NECs 1310 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 622 Mb/s APPLICATION
|
CEL[California Eastern Labs]
http://
|
| C-13-DFB10-TK-SSCMI-01 C-13-DFB10-TK-SLCMI-01 |
10Gbps 1310 nm MQW-DFB Laser Diode Module-Differential TOSA
|
Source Photonics, Inc.
|
| C-13-DFB10-PK-SLC2I C-13-DFB10-PK-SLCLI C-13-DFB10 |
10Gbps 1310 nm MQW-DFB Laser Diode Pigtailed Module-Differential TOSA
|
Source Photonics, Inc.
|
| ML9XX15 |
InGaAsP DFB-LD with EA modulator
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| KLT-231412 |
1310nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN
|
KODENSHI KOREA CORP.
|
| KLT-249414 |
1490nm InGaAsP strained MQW DFB LD for 1.25G TO CAN
|
KODENSHI KOREA CORP.
|
| KLT-255444 |
1550nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN
|
KODENSHI KOREA CORP.
|
| NX8510UD-AZ NX8510UD |
NECs InGaAsP MQW-DFB TOSA FOR 2.5 Gb/s CWDM APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX8510UD NX8510UD-AZ |
NECs InGaAsP MQW-DFB TOSA FOR 2.5 Gb/s CWDM APPLICATIONS
|
California Eastern Laboratories
|
