| PART |
Description |
Maker |
| KMM53216000BV |
16M x 32 DRAM SIMM(16M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V54C3256164VDUF6I V54C3256404VDUT7I V54C3256164VDU |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|
| THMY641661BEG-100 |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块)
16M Word x 64 Bit Synchronous DRAM Module(16M瀛?x 64浣??姝ュ???AM妯″?)
|
Toshiba Corporation
|
| HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
|
Infineon Technologies AG
|
| MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
| V827316K04S V827316K04SXTG-B1 |
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
MOSEL-VITELIC
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| HYM72V1600GS-50 HYM72V1610GS-50 HYM72V1600GS-50- H |
16M x 72-Bit Dynamic RAM Module 16米x 72位动态随机存储器模块
16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
|
SIEMENS AG
Siemens Semiconductor Group
|
| HYE25L128800AC-8 HYB25L128800AC-7.5 |
16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54 9 X 8 MM, FBGA-54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Infineon Technologies AG
|
| IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
| HYB39L256160AC-7.5 HYB39L256160AT-7.5 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
| W981208BH-8H W981208BH-7 |
4M x 4 BANKS x 8 BIT SDRAM
x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| HY57V561620CT-H HY57V561620CLT-P HY57V561620CLTP-P |
4 Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
