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K521F12ACD-B060 - 1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM

K521F12ACD-B060_4270493.PDF Datasheet
 Full text search : 1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
 Product Description search : 1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM

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K522H1HACF-B050 2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
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NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
 ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
HY27UA081G1M HY27SA161G1M HY27SA081G1M NAND Flash - 1Gb
 Hynix Semiconductor
K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G0 -2M x 8 Bit NAND Flash Memory
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
 Samsung Electronic
SAMSUNG[Samsung semiconductor]
K9F1G08Q0A K9F1G08U0A K9F1G08Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
 Samsung Electronic
SAMSUNG[Samsung semiconductor]
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EBE11UD8AGSA EBE11UD8AGSA-5C-E EBE11UD8AGSA-6E-E 1GB DDR2 SDRAM SO-DIMM (128M words x 64 bits, 2 Ranks)
 Elpida Memory, Inc.
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K521F12ACD-B060 state diagram K521F12ACD-B060 MARKING K521F12ACD-B060 Processor K521F12ACD-B060 terminal K521F12ACD-B060 Data
 

 

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