PART |
Description |
Maker |
K4H510438 |
512Mb B-die DDR SDRAM Specification
|
Samsung semiconductor
|
K4H510438B-UC_LA2 K4H510438B-UC_LB0 K4H510438B-TC_ |
512MB B-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H511638F-LC/LCC K4H510438F-LC/LB3 K4H510838F-LC/ |
512Mb F-die DDR SDRAM Specification
|
Samsung semiconductor
|
K4H511638F |
512Mb F-die DDR SDRAM Specification
|
Samsung semiconductor
|
K4H510838B-VC_LCC K4H510838B-N K4H510838B-NC_LA2 K |
512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)
|
SAMSUNG[Samsung semiconductor]
|
K4H510838C-ZCCC K4H510438C-ZCCC K4H510838C-ZCB3 K4 |
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格 CAP 0.01UF 1000V 10% X7R SMD-1812 TR-13 FLEXITERM
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4H561638A-TCA0 K4H561638A-TCA2 K4H561638A-TCB0 K4 |
128Mb F-die DDR SDRAM Specification 256Mb DDR SDRAM DDR SDRAM Specification Version 1.0 128MB DDR SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYS72D64320GBR-7-B HYS72D32300GBR-7-B HYS72D64300G |
DDR SDRAM Modules - 512 MB (64Mx72) PC2700; 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank, FBGA based DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC3200 1-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC2700 1-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank available 2Q/04 DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank, FBGA based DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank, FBGA based
|
Infineon
|
M381L6523BUM-LCC M368L2923BTM-CCC M368L2923BTM-LCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
|
SAMSUNG[Samsung semiconductor]
|
K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S |
512Mb B-die SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4T51043QB-ZCD5 K4T51163QB-GCD5 K4T51083QB-GCD5 K4 |
512Mb B-die DDR2 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|