| PART |
Description |
Maker |
| IC41C16257S-35T IC41C16257S-60TI IC41LV16257S-50K |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K × 16兆位）充满活力和快速页面模式内
CONNECTOR ACCESSORY
|
Integrated Circuit Solution Inc
Electronic Theatre Controls, Inc.
Integrated Circuit Solu...
|
| IS41C16256-60K IS41LV16256-60K IS41C16256-25TI IS4 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K × 164兆位）的动态与江户页面模式内存
|
Integrated Circuit Solu...
Cypress Semiconductor Corp.
Integrated Circuit Solution Inc
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| IC42S16100 IC42S16100-5T IC42S16100-6TG |
512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
DYNAMIC RAM, SDRAM
|
Integrated Circuit Solu...
ICSI
|
| IS41LV8512 IS41C8512 41C8512 IS41C8512-35K IS41C85 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
From old datasheet system
DYNAMIC RAM, EDO DRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| V53C8256H35 |
ULTRA-HIGH SPEED, 256K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高速，256K × 8快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| CY7C1034DV33-8BGXC |
6-Mbit (256K X 24) Static RAM 256K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IC41C16100AS IC41C16100A IC41LV16100AS IC41LV16100 |
DYNAMIC RAM, EDO DRAM
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| IC41C82002 IC41LV82002 IC41C82002-50J IC41C82002-5 |
DYNAMIC RAM, EDO DRAM
2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| CY7C1041CV33-12ZSXE |
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
