| PART |
Description |
Maker |
| GS816236BB-200V GS816218BB-150IV GS816218BB-150V G |
1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS88218BB-333 GS88218BB-3005I GS88218BB-200 GS8823 |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 5 ns, PBGA119
|
http://
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| CY7C1386C-167BZI CY7C1386C-167AI CY7C1386C-200AI C |
18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS8322V72C-200I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
|
GSI Technology
|
| GS88218BGB-200V GS88236BB-250IV |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 256K X 36 CACHE SRAM, 5.5 ns, PBGA119
|
GSI Technology, Inc.
|
| CY7C1366C-225AXC CY7C1366C-225AXI CY7C1366C-225BGC |
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
|
CYPRESS[Cypress Semiconductor]
|
| GS882V36BB-200 GS882V18BB-200 GS882V18BB-300 GS882 |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
http://
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT |
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
2.5V 512K x 32/36 flowthrough burst synchronous SRAM
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
|
| WPS512K32-15PJC WPS512K32-15PJI WPS512K32-17PJC WP |
512K x 8 SRAM, 15ns
512K x 8 SRAM, 17ns
512K x 8 SRAM, 20ns
512K x 8 SRAM, 25ns
|
White Electronic Designs
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