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2N7002T - N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

2N7002T_4177687.PDF Datasheet

Part No.

2N7002T

Description

N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

File Size

71.32K / 12 Page

Maker

NXP Semiconductors N.V.

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: 2N7002T

Maker: DIODES

Pack: SOT-32..

Stock: Reserved

Unit price for :

50: $0.03

100: $0.03

1000: $0.03

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Full text search : N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

Product Description search : N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

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2N7002T - N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB