| PART |
Description |
Maker |
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| 1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor
55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| HVV1214-025S |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
|
HVVi Semiconductors, Inc.
|
| CGHV14250-TB CGHV14250F CGHV14250F-AMP CGHV14250P |
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| CGHV14800F-AMP CGHV14800-TB |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| 1214-300V |
300 Watts - 50 Volts, 330渭s, 10% Radar 1200 - 1400 MHz
300 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| 1214-300M |
300 Watts - 40 Volts, 150楼矛s, 10% Radar 1200 - 1400 MHz
300 Watts - 40 Volts, 150μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| 1214-300 |
300 W, 50 V, 1200-1400 MHz common base transistor
BJT
|
GHz Technology
|
| 1214-300 |
300 Watts - 50 Volts, 100us, 10% Radar 1200 1400 MHz
|
ADPOW[Advanced Power Technology]
|
| ZHL-1217HLN |
1200 MHz - 1700 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER CASE NN92
|
Mini-Circuits
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