| PART |
Description |
Maker |
| MAGX-001220-1SB1PPR MAGX-001220-100L00 MAGX-001220 |
GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MAGX-002735-SB0PPR MAGX-002735-040L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| CG2H80015D |
15 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CGH40010 |
10 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| TGI8596-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| TGI0910-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| MAGX-000025-150000-V1 MAGX-000025-150000-15 |
GaN on SiC HEMT Power Transistor
|
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| TGF2952 TGF2952-15 |
7 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2954-15 |
27 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-003135-120L00 MAGX-003135-120L00-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
