| PART |
Description |
Maker |
| SPN04N60S5 SPN04N60S505 |
New revolutionary high voltage technology Worldwide best RDS in SOT 223
|
Infineon Technologies AG
|
| SPP11N60CFD07 |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
http://
|
| SPB04N60S5 SPB04N60S507 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP02N60C3 SPP02N60C307 SPP02N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
Infineon Technologies A...
|
| SPB20N60C3 SPB20N60C309 |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP20N65C3 SPP20N65C309 SPI20N65C3 SPA20N65C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP04N60S5 SPP04N60S507 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPB07N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP17N80C3 SPP17N80C307 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
| SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| IPB60R060C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|
