| PART |
Description |
Maker |
| GS8662S09E-167I |
72Mb Burst of 2 DDR SigmaSIO-II SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| GS8160F32T-6I GS8160F18T-8.5 GS8160F36T-8.5I GS816 |
6ns 512K x 32 18MB synchronous burst SRAM
8.5ns 1M x 18 18MB synchronous burst SRAM
8.5ns 512K x 36 18MB synchronous burst SRAM
8.5ns 512K x 32 18MB synchronous burst SRAM
|
GSI Technology
|
| CY7C1518KV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS8160FV18B GS8160FV32B GS8160FV36B |
18Mb Burst SRAMs
|
GSI Technology
|
| GS8161ZV36C GS8161ZV18C |
18Mb Burst SRAMs
|
GSI Technology
|
| GS8160ZV18C |
18Mb Burst SRAMs
|
GSI Technology
|
| GS8162V72C |
18Mb Burst SRAMs
|
GSI Technology
|
