| PART |
Description |
Maker |
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| BSM300GB120DLC |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C)
|
Eupec
|
| MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
|
Toshiba Semiconductor
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| GP400LSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
ITT, Corp.
|
| CM600E2Y34H |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.7KV V(BR)CES | 600A I(C) 晶体管| IGBT功率模块|独立| 1.7KV五（巴西）国际消费电子展| 601余（丙）
|
Powerex, Inc.
|
| VII100-12S4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Aimtec
|
| IEF21KA1 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 15A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1KV交五（巴西）国际消费电子展|5A一（c
|
TE Connectivity, Ltd.
|
