| PART |
Description |
Maker |
| MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
High Q Hyperabrupt Tuning Varactors
L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
| ZC930 ZC930TA ZC931TA ZC932TA ZC933A ZC933ATA ZC93 |
12 Volt hyperabrupt varactor diode
SILICON 12V HYPERABRUPT VARACTOR DIODES VHF BAND, 7.15 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 12V HYPERABRUPT VARACTOR DIODES VHF BAND, 4.9 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
CAP 0.022UF 600V/630V 10% X7R SMD-1812 TR-7 FLEXITERM VHF BAND, 9.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
ZETEX PLC
|
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| GC1611-30 |
X BAND, 6.8 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| MA27V13 |
UHF BAND, 11.71 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC CORP
|
| BB901235 |
VHF BAND, SILICON, VARIABLE CAPACITANCE DIODE
|
NXP SEMICONDUCTORS
|
| VG112-G VG112-PCB VG112 |
PCS/UMTS-band Variable Gain Amplifier
|
WJ Communications, Inc.
WJCI[WJ Communication. Inc.]
|
| EH74470 |
L BAND, 47 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
TEMEX COMPONENTS
|
| BB249 |
VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
NXP SEMICONDUCTORS
|
| DO234B DO224B-3M 1M234 |
HF-UHF BAND, 22 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
HF-UHF BAND, 10 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
SEMIKRON
|
| 1SV284 |
VARIABLE CAPACITANCE DIODE (VCO FOR V/UHF BAND RADIO)
|
Toshiba Semiconductor
|
|
