| PART |
Description |
Maker |
| K7I643684M-EI25 K7I643684M-EI30 K7I641884M-CI30 K7 |
72Mb DDRII SRAM Specification 72Mb SRAM的规范条DDRII
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| GS8644ZV18B GS8644ZV18E-166I GS8644ZV18B-250 GS864 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8662D09E-333I GS8662D08E GS8662D09GE-200I GS8662 |
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 72Mb SigmaQuad -Ⅱ的4 SRAM的突
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.5 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8644V18B-166I GS8644V36E-225 GS8644V18E-150I |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PBGA165
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS86422V72 GS8642V36 GS8642V18 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS8640V36T-200 GS8640V36T-300 GS8640V36T-300I |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
http://
|
| GS864418E-200IV GS864418E-200V GS864418E-133IV GS8 |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8640Z36T-200 GS8640Z36T-300I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
| GS8640Z18T-250I GS8640Z18T GS8640Z18T-167 GS8640Z1 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| K7J641882M |
(K7J641882M / K7J643682M) 72Mb M-die DDRII SRAM Specification
|
Samsung semiconductor
|
| K7J641882M K7J643682M K7J641882M-FC16 K7J641882M-F |
72Mb M-die DDRII SRAM Specification 72Mb的M -模条DDRII规格的SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
