| PART |
Description |
Maker |
| FY3ABJ-03 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Renesas Electronics Corporation
|
| FX50KMJ-2 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Powerex Power Semiconductors
|
| FX20ASJ-06 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
|
| FX6ASJ-3 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| FX6ASJ-06 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE 6 A, 60 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| QS8K2FRA QS8K2FRATR |
30V Pch Pch Middle Power MOSFET
|
ROHM
|
| SP8J5FRATB |
4V Drive Pch Pch MOSFET (Corresponds To AEC-Q101)
|
ROHM
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| FS30KM-2 |
30 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FN
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| QS8J4 |
4V Drive Pch Pch MOSFET
|
Rohm
|
| EM6J1 |
1.2V Drive Pch Pch MOSFET
|
ROHM
|
