| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| MS1490 |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology
|
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| BLW32 |
UHF linear power transistor(UHF线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| S-AV7 |
VHF HAM FM RF POWER AMPLIFIER MODULE
|
Toshiba Semiconductor
|
| BLV194 |
UHF power transistor UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| 2SC3862 E000891 |
From old datasheet system
NPN EPITAXIAL PLANAR TYPE (TY TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| SD1400-3 |
UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI CORP
|
| MRF1508 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
|
| S-AU83L |
FM RF POWER AMPLIFIER MODULE for UHF BAND
|
Toshiba Semiconductor
|
