| PART |
Description |
Maker |
| STB60NH02L_04 B60NH02L STB60NH02L STB60NH02LT4 |
N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB60NH02LT4 STB60NH02L04 |
N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET
N-CHANNEL 24V - 0.0085 OHM - 60A D2PAK STRIPFET III POWER MOSFET
|
ST Microelectronics
|
| STD50NH02L 9063 |
N-CHANNEL 24V - 0.0085 OHM - 50A DPAK/IPAK STRIPFET III POWER MOSFET
From old datasheet system
|
STMicroelectronics
|
| FDB6670AS FDB6670ASNL FDP6670AS FDP6670ASNL FDB667 |
30V N-Channel PowerTrench SyncFET 62 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| PSMN008-75P PSMN008-75B |
N-channel enhancement mode field-effect transistor 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MUX08AQ_883C MUX08BQ_883C MUX08EP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)
|
Analog Devices
|
| NP82N06PDG-E2-AY NP82N06PDG-E1-AY |
82 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
|
NEC, Corp.
Renesas Electronics Corporation
|
| IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|47SMD
|
IXYS, Corp.
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| DF100R12KF-A FD150R12KF-K |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 100A一（c）|米：HL093HW048
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 150A一（c）|米：HL093HW048
|
Atmel, Corp.
Air Cost Control
|
