| PART |
Description |
Maker |
| MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL
ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| MCM69R736AZP5 MCM69R736AZP5R MCM69R736AZP8 MCM69R7 |
4M Late Write HSTL 128K X 36 LATE-WRITE SRAM, 4 ns, PBGA119
Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:36-1 RoHS Compliant: No
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
|
GSI Technology, Inc.
|
| GS815018AB-250 GS815018AGB-250 GS815036AB-250 GS81 |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.4 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.5 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119
512K X 36 LATE-WRITE SRAM, 1.4 ns, PBGA119
|
GSI Technology, Inc.
|
| HM62G18512ABP-30 HM62G18512ABP-33 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas
|
| MCM69R536ZP4.4R |
32K X 36 LATE-WRITE SRAM, 2.2 ns, PBGA119
|
MOTOROLA INC
|
| MCM63R818FC3.7R |
256K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
|
Freescale Semiconductor, Inc.
|
| CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18 Organization)
From old datasheet system
|
Sony
|
| GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300 |
18Mb ??x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb B>1x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM
|
GSI Technology
|
| AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
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