| PART |
Description |
Maker |
| S29GL512N S29GL256N90FFI010 S29GL256N90FFIV20 S29G |
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22M PIN PLUG 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 80 ns, PDSO56
MirrorBit Flash Family MirrorBit闪存系列
Replaced by PTB48520W : 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22D SKT PLUG
|
Spansion, Inc.
Spansion Inc.
ETC
|
| MX26C2000BQI-15 MX26C2000BTC-10 MX26C2000BTI-10 MX |
DIODE SCHOTTKY 15V 2X35A TO247AD
SWITCH PB SPST-NO .4VA SOLDERLUG
CONNECTOR ACCESSORY
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
IC HALF BRIDGE DRVR HS 2A 16-DIP 256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| CAT28F010GI-12TE13 CAT28F010T14I-90TE13 |
128K X 8 FLASH 12V PROM, 120 ns, PQCC32
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON SEMICONDUCTOR
|
| DPZ512X16II3-20C DPZ512X16IY3-20C DPZ512X16IH3-20C |
512K X 16 FLASH 12V PROM MODULE, 200 ns, QIP48 HERMETIC SEALED, CERAMIC, STRAIGHT, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, CQCC48 HERMETIC SEALED, CERAMIC, LEADLESS, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, QFP48 HERMETIC SEALED, CERAMIC, GULLWING, MODULE, SLCC-48
512K X 16 FLASH 12V PROM MODULE, 200 ns, PGA50 HERMETIC SEALED, CERAMIC, MODULE, SLCC, PGA-50
|
Twilight Technology, Inc.
|
| IS28F010-45PL IS28F010-45PLI IS28F010-45T IS28F010 |
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDSO32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PQCC32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDIP32
|
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM28F020-120C3EE AM28F020-120C3EI AM28F020-120C3FI |
256K X 8 FLASH 12V PROM, 120 ns, PDSO32
256K X 8 FLASH 12V PROM, 120 ns, PDIP32
|
ADVANCED MICRO DEVICES INC
|
| MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX |
Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes
Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| CAT28F512H14I-90TE13 CAT28F512T14I-90TE7 CAT28F512 |
64K X 8 FLASH 12V PROM, 90 ns, PDSO32
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
ON SEMICONDUCTOR
|
| AM28F512 AM28F512150PC AM28F512-120JEB AM28F512-90 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V，CMOS 512K位整体擦除闪速存储器)
IC-512K FLASH MEMORY
4-bit magnitude comparators 16-PDIP 0 to 70
Quad 2-input exclusive-OR gates 14-PDIP 0 to 70
Decade Counter 14-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-PDIP 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-SOIC 0 to 70
Quad bistable latches 16-SOIC 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70
4-bit magnitude comparators 16-SOIC 0 to 70
Quad bistable latches 16-PDIP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SSOP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70
8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PDSO32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
ER 14C 14#16 PIN RECP LINE
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
SPANSION LLC
|
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