| PART |
Description |
Maker |
| IPB60R120C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|
| IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFH12N100Q IXFT12N100Q IXFH10N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Q Class
|
IXYS Corporation
|
| IXFR24N50 IXFR26N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
| IXFR4N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)
|
IXYS
|
| IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| SPA20N60CFD10 |
CoolMOS Power Transistor
|
Infineon Technologies AG
|
| IPI60R199CP IPI60R199CP08 |
CoolMOS Power Transistor
|
Infineon Technologies AG
|
| IPW90R1K2C3 |
CoolMOS Power Transistor
|
Infineon Technologies AG
|
