| PART |
Description |
Maker |
| 1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor
30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| 1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor
55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| ACLM-4603HC88R-RC |
1200 MHz - 1400 MHz RF/MICROWAVE LIMITER ROHS COMPLIANT, CASE C88
|
Sumida, Corp.
|
| 1214-700P |
700 Watts - 300楼矛s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
700 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| 1214-110V |
110 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz
|
Advanced Power Technology
Microsemi Corporation
|
| LH-FSLH-S130C-0406A FSLH-S130C |
2012 Size 1200/1400 MHz Chip Multilayer Splitter/Combiner
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| PH1214-25L |
1200-1400 MHz,25 W, 300 ms pulse,radar pulsed power transistor
|
MA-Com
|
| DPAT-025075060-08 DAT-01200140 |
2500 MHz - 7500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX 34 X 34 MM, 12.7 MM HEIGHT, 2 PIN
1200 MHz - 1400 MHz RF/MICROWAVE FIXED ATTENUATOR, 5 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
MITEQ INC
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| AM50-0006 AM50-0006PCS AM50-0006PDC AM50-0006TR AM |
1400-2000 MHz, low noise amplifier
Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
Low Noise Amplifier 1400 - 2000 MHz
1400-1520 MHz, low noise amplifier
|
MACOM[Tyco Electronics]
MA-Com
|
| BX3086 |
1400 MHz - 1600 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
SPECTRUM CONTROL INC
|
