| PART |
Description |
Maker |
| ZABG4002 |
Advanced Low Power Four-Stage GaAs FET Bias IC
|
Diodes
|
| MGFC5108 C5108A |
From old datasheet system
Ka-Band 3-Stage Self Bias Low Noise Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC5109 C5109A |
From old datasheet system
Ka-Band 3-Stage Self Bias Low Noise Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| STK8280 |
80W MIN AF POWER AMP, OUTPUT STAGE (DUAL SUPPLIES) WITH BUILT-IN QUASI CLASS A BIAS CIRCUIT
|
Sanyo Semicon Device
|
| AN11010 |
Single stage Ku band LNA using BFU730F
|
NXP Semiconductors
|
| LT1166 LT1166CN8 LT1166CS8 |
From old datasheet system
Power Output Stage Automatic Bias System
|
LINER[Linear Technology]
|
| MGF0952P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0917A MGF0917A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0916A MGF0916A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0909A11 |
High-power GaAs FET(small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0951P MGF0951P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0911A MGF0911A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
