| PART |
Description |
Maker |
| EDD1216AASE EDD1216AASE-7A-E EDD1216AASE-6B-E |
ER 3C 3#8 SKT PLUG LINE 8M X 16 DDR DRAM, 0.7 ns, PBGA60
128M bits DDR SDRAM (8M words x 16 bits) 8M X 16 DDR DRAM, 0.75 ns, PBGA60
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| H5PS1G63EFR H5PS1G43EFR H5PS1G83EFR H5PS1G43EFR-E3 |
1Gb DDR2 SDRAM
256M X 4 DDR DRAM, PBGA60
128M X 8 DDR DRAM, PBGA60
|
http://
HYNIX SEMICONDUCTOR INC
|
| HY5PG1G431CFP-Y5 HY5PG1G831CLFP-Y5 HY5PG1G831CFP-Y |
DDR DRAM, PBGA60 ROHS COMPLIANT, FPBGA-60
|
Hynix Semiconductor, Inc.
|
| HMP525R7FFP4C-E3 HMP512R7FFP4C-E3 HMP512P7FFP4C-Y5 |
240pin Registered DDR2 SDRAM DIMMs based on 512 Mb F ver.
DDR DRAM MODULE, PBGA60 ROHS COMPLIANT, FBGA-60
|
Hynix Semiconductor, Inc.
|
| IS43LR16800E-6BLE |
8M X 16 DDR DRAM, 8 ns, PBGA60
|
INTEGRATED SILICON SOLUTION INC
|
| HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
| V59C1512804QBF37 |
64M X 8 DDR DRAM, 0.5 ns, PBGA60
|
PROMOS TECHNOLOGIES INC
|
| EDD10163ABH-6DLS-F |
64M X 16 DDR DRAM, 5 ns, PBGA60
|
ELPIDA MEMORY INC
|
| HY5DU56422DF-D4 |
64M X 4 DDR DRAM, 0.65 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| V54C3256404VDLF8PC V54C3256804VDLF8PC |
64M X 4 SYNCHRONOUS DRAM, 6 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
32M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
|
ProMOS Technologies, Inc.
|
| HYB25D256160BF-7 HYB25D256160BEL-7F |
16M X 16 DDR DRAM, 0.75 ns, PBGA60
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INFINEON TECHNOLOGIES AG
|
| K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
256Mb H-die DDR SDRAM Specification
|
Atmel, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
