| PART |
Description |
Maker |
| K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification
16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
| M2V64S20DTP-6L M2V64S30DTP-6L M2V64S40DTP-6L M2V64 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V64S4DTP-7 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| HY57V56420AT-H |
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| UPD4564841G5 UPD4564441 UPD4564163 UPD4564163G5 UP |
64M-bit Synchronous DRAM 4-bank, LVTTL
|
ELPIDA[Elpida Memory]
|
| M5M4V64S30ATP-8A M5M4V64S30ATP-8L |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| MT18LSDT6472G-133XX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 MO-161, DIMM-168
|
Unisonic Technologies Co., Ltd.
|
| M5M4V64S20ATP-8 M5M4V64S20ATP-10 M5M4V64S20ATP-12 |
From old datasheet system
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| 967598-1 |
MODU II PIN HEADER , 32 POS. MODU II Stiftwanne , 32 pol
|
Tyco Electronics
|
