PART |
Description |
Maker |
M393B5673GB0-CF8 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
W3EG2128M64ETSR335JD3SF |
256M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
W3EG2128M64ETSR335JD3MG |
256M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
HYS72T256220HR-5-B |
256M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
|
INFINEON TECHNOLOGIES AG
|
M392B5270DH0-CK0 M392B5773DH0-CF8 |
512M X 72 DDR DRAM MODULE, 20 ns, DMA240 256M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
HYMP125S64CP6-S5 HYMP125S64CP6-S6 HYMP125S64CP6-Y5 |
256M X 64 DDR DRAM MODULE, 0.4 ns, DMA200 ROHS COMPLIANT, SODIMM-200 256M X 64 DDR DRAM MODULE, 0.45 ns, DMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
NT2GC72B8PA1NF-CG NT2GC72B8PA0NF-CG |
256M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, UDIMM-240
|
Nanya Technology, Corp.
|
HY5TQ1G431ZNFP-H8 HY5TQ1G431ZNFP-H7 HY5TQ1G431ZNFP |
256M X 4 DDR DRAM, 0.255 ns, PBGA82 FBGA-82 256M X 4 DDR DRAM, 0.225 ns, PBGA82 FBGA-82 64M X 16 DDR DRAM, 0.3 ns, PBGA100 64M X 16 DDR DRAM, 0.255 ns, PBGA100
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
K4H1G0438A-UCB30 K4H1G0838A-UCB00 |
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 128M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Cypress Semiconductor, Corp.
|
M392T2863CZA-CF7 M392T5660CZA-CCC M392T5660CZA-CD5 |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240 512M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 ROHS COMPLIANT, DIMM-240 512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240 256M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 ROHS COMPLIANT, DIMM-240 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Samsung Semiconductor Co., Ltd.
|
HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
|