| PART |
Description |
Maker |
| M28F256-12C313 M28F256-12C113 M28F256-12C114 M28F2 |
32K X 8 FLASH 12V PROM, 120 ns, PQCC32 0.450 X 0.550 INCH, PLASTIC, LCC-32
32K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
ST Microelectronics
STMICROELECTRONICS
|
| M28V161-100N1R M28V161-150M1R M28V161-150N1R M28V1 |
2M X 8 FLASH 12V PROM, 100 ns, PDSO48 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
2M X 8 FLASH 12V PROM, 150 ns, PDSO44 0.525 INCH, PLASTIC, SO-44
2M X 8 FLASH 12V PROM, 150 ns, PDSO48 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
2M X 8 FLASH 12V PROM, 120 ns, PDSO48 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
2M X 8 FLASH 12V PROM, 100 ns, PDSO44 0.525 INCH, PLASTIC, SO-44
2M X 8 FLASH 12V PROM, 120 ns, PDSO44 0.525 INCH, PLASTIC, SO-44
|
ST Microelectronics
|
| AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
1M X 16 FLASH 3V PROM, 90 ns, PDSO48
1M X 16 FLASH 3V PROM, 90 ns, PDSO44
1M X 16 FLASH 3V PROM, 70 ns, PDSO48
1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| M28V841-100N3RTR M28V841-150N3R M28V841-120N3RTR M |
1M X 8 FLASH 12V PROM, 100 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
1M X 8 FLASH 12V PROM, 150 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
1M X 8 FLASH 12V PROM, 120 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
|
ST Microelectronics
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| M28F220-90M1TR M28F220-90M6TR -M28F220 STMICROELEC |
256K X 8 FLASH 12V PROM, 90 ns, PDSO44
2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb???瀛???ī
256K X 8 FLASH 12V PROM, 70 ns, PDSO44
|
STMICROELECTRONICS
|
| IS28LV020-90T IS28LV020-90W |
256K X 8 FLASH 12V PROM, 90 ns, PDSO32 TSOP-32
256K X 8 FLASH 12V PROM, 90 ns, PDIP32 0.600 INCH, PLASTIC, DIP-32
|
Integrated Silicon Solution, Inc.
|
| CAT28F010HI-12 CAT28F010HI90 |
1 Mb Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Mb Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON Semiconductor
|
| SST49LF004B10 SST49LF004B SST49LF004B-33-4C-NHE SS |
512K X 8 FLASH 3V PROM, 120 ns, PDSO32
4 Mbit Firmware Hub
512K X 8 FLASH 3V PROM, 120 ns, PQCC32
|
http://
Silicon Storage Technology, Inc
|
| DPZ128X32IV3-12I |
128K X 32 FLASH 12V PROM MODULE, 120 ns, PGA66 CERAMIC, MODULE, SLCC, PGA-66
|
Twilight Technology, Inc.
|
| AM29F080B-120SCB AM29F080B-120FCB |
1M X 8 FLASH 5V PROM, 120 ns, PDSO44
1M X 8 FLASH 5V PROM, 120 ns, PDSO40
|
SPANSION LLC
|
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