| PART |
Description |
Maker |
| MT54W4MH9B MT54W4MH8B MT54W1MH36B-5 MT54W1MH36B-7. |
36Mb QDRII SRAM 2-WORD BURST 36Mb QDR⑩II SRAM 2-WORD BURST ⑩分6MB四年防务审查II SRAM字爆 36Mb QDR?┥I SRAM 2-WORD BURST
|
Micron Technology, Inc.
|
| IS61DDP2B41M36A/A1/A2 IS61DDP2B42M18A IS61DDP2B42M |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| GS8321EV18 |
36Mb Burst SRAMs
|
GSI Technology
|
| GS8322V72 GS8322V18 |
36Mb Burst SRAMs
|
GSI Technology
|
| GS832036GT-150IV GS832036GT-150V |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI Technology
|
| GS832118GE-166 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI Technology
|
| GS8342Q36E-300 GS8342Q08E-200 GS8342Q08GE-200I GS8 |
36Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS832118E-150I GS832118E-200 GS832118E GS832118E-1 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| CY7C1423JV18-250BZXC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture; Architecture: DDR-II SIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| MT54W4MH9B-4 MT54W4MH9B-5 MT54W4MH9B-6 MT54W4MH9B- |
36Mb QDR?II SRAM 2-WORD BURST
|
Micron Technology http://
|
| GS8321E32GE-250I GS8321E32E-150I |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 5.5 ns, PBGA165 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|