| PART |
Description |
Maker |
| KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K3P7U1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung semiconductor
|
| AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-8TC AS |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Alliance Semiconductor, Corp.
|
| YG963S6R |
SILICON DIODE
IC AM29LV065 64 MBIT (8MX8) CMOS 3.0 VOLT UNIFORM SECTOR FLASH MEMORY
|
http://
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| AM29LV641D AM29LV640D AM29LV640DH101REE AM29LV640D |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640D/Am29LV641D-64Megabit(4Mx16-Bit)CMOS3.0Volt-onlyUniformSectorFlashMemorywithVersatileIOControl
|
AMD
AMD[Advanced Micro Devices]
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AP65111AWU-7 |
LIGHT LOAD IMPROVED 1.5A SYNCH DC/DC BUCK CONVERTER
|
Diodes Incorporated
|
| W986416DH |
SDRAM 4Mx16
|
Winbond Electronics
|
| M463S1724DN1 |
16Mx64 SDRAM mSODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synch. DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| KMM5324000BSWG KMM5328000BSW KMM5324000BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| CMS6416LAX-75XX |
64M(4Mx16) Low Power SDRAM
|
FIDELIX
|
